Authors: Muzychenko, D.A.; Schouteden, K.; Savinov, S.V.; Maslova, N.S.; Panov, V.I.; Van Haesendonck, C.

Source: Journal of Nanoscience and Nanotechnology, Volume 9, Number 8, August 2009 , pp. 4700-4708(9)

Publisher: American Scientific Publishers

Abstract:

We report on the experimental observation by scanning tunneling microscopy at low temperature of ring-like features that appear around Co metal islands deposited on a clean (110) oriented surface of cleaved p-type InAs crystals. These features are visible in spectroscopic images within a certain range of negative tunneling bias voltages due to the presence of a negative differential conductance in the current-voltage dependence. Atheoretical model is introduced, which takes into account non-equilibrium effects in the small tunneling junction area. In the framework of this model the appearance of the ring-like features is explained in terms of interference effects between electrons tunneling directly and indirectly (via a Co island) between the tip and the InAs surface.

Keywords: COBALT; INAS; SEMICONDUCTORS; LOCALIZED STATES; NON-EQUILIBRIUM EFFECTS; INTERFERENCE EFFECTS; 2D ELECTRON GAS; SCANNING TUNNELING MICROSCOPY; SCANNING TUNNELING SPECTROSCOPIES

Document Type: Research article

DOI: http://dx.doi.org/10.1166/jnn.2009.1086

Publication date: 2009-08-01

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