Ultrafast Transient Grating Spectroscopy in Silicon Quantum Dots
Authors: Wen, Xiaoming; Van Dao, Lap; Hannaford, Peter; Cho, Eun-Chel; Cho, Young H.; Green, Martin A.
Source: Journal of Nanoscience and Nanotechnology, Volume 9, Number 8, August 2009 , pp. 4575-4579(5)
Publisher: American Scientific Publishers
Abstract:
Transient grating spectroscopy detects directly the relaxation of the excited carriers rather than time-resolved photoluminescence and thus it is particularly desired for the indirect semiconductors such as silicon quantum dots. We investigate ultrafast carrier dynamics in silicon quantum dots embedded in silicon oxide matrix using femtosecond transient grating spectroscopy. Two ultrafast decay components are observed with decay time of 800 fs and 4 ps at various detection wavelengths, which are attributed to the transverse optical and transverse acoustic phonon assisted relaxation. Photoexcited electrons and holes are effectively trapped into the localized states on the surface of the silicon quantum dots where electrons and holes have a slow recombination in the time scale of microseconds.Keywords: ULTRAFAST SPECTROSCOPY; SILICON QUANTUM DOTS
Document Type: Research article
DOI: http://dx.doi.org/10.1166/jnn.2009.1084
Publication date: 2009-08-01
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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