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Enhancement of Field-Emission Properties in ZnO Nanowire Array by Post-Annealing in H2 Ambient

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We studied the effects of post-annealing in H2 and O2 ambients on field-emission properties of vertically-aligned ZnO nanowire arrays synthesized by carbothermal reduction process. The turn-on electric field was dramatically decreased from 3.78 to 2.37 V/m after post-annealing in H2 ambient, which was explained by both hydrogen passivation effects of deep levels and surface modification. In other words, we could observe significant decrease of deep level peak in photoluminescence measurements on hydrogen post-annealed ZnO nanowire array. And also hydrogen-related bonds are strongly increased from X-ray photoelectron spectroscopy measurements. These findings suggest that the concentration of conduction electrons increased by hydrogen post-annealing, which results in the enhanced tunneling probability of conduction electrons into the vacuum.


Document Type: Research Article


Publication date: 2009-07-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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