Growth and Dissolution Kinetics of Ultra Thin Silicon Films on Cu(100)

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On Cu(100) surface, Auger electron spectroscopy (AES), Low Energy Electron Diffraction (LEED) and Scanning Tunnelling Microscopy (STM) were used to study (i) at room temperature (RT) the first steps of silicon growth and, (ii) at higher temperature, the dissolution process of silicon in Cu(100). The growth kinetics of Silicon onto Cu(100) at RT monitored by AES shows a quasi perfect layer-by-layer behaviour. After deposition at RT of about 5 silicon monolayers (ML), isochronal dissolution kinetics (rate of annealing of 1.5 °C/min) is recorded in a temperatures range [50–400 °C]. The slowdown observed in the kinetics dissolution for temperatures between 150 and 340 °C, reveals formation of an intermetallic superficial phase thermally stable in this range of temperature. LEED pattern and STM images show large domains of a rectangular (5 × 3) superstructure.


Document Type: Research Article


Publication date: July 1, 2009

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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