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ZnO Nanowire-Based Nonvolatile Memory Devices with Al2O3 Layers as Storage Nodes

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Abstract:

Top-gate ZnO nanowire field-effect transistors (FETs) with Al2O3 gate dielectric layers as storage nodes were fabricated and their memory effects were characterized in this work. The Al2O3 layers deposited on the ZnO nanowire channels were utilized not only as gate dielectric ones but also as charge trapping ones. For a representative top-gate ZnO nanowire FET, its IDSVGS characteristics for the double sweep of the gate voltages exhibit the counterclockwise hysteresis and the threshold voltage shift. The gate voltage in the pulse form was applied for 1 s, and the threshold voltage shift of IDSVGS characteristics was extended from 0.3 to 0.8 V compared with that for the double sweep. In this ZnO nanowire FET, negative charge carriers originated from the gate electrode are stored in the Al2O3 layer for applied negative gate voltages, and they are extracted for applied positive gate voltages.

Keywords: AL2O3; CHARGE TRAPPING; FIELD EFFECT TRANSISTOR; MEMORY DEVICE; NANOWIRE

Document Type: Short Communication

DOI: http://dx.doi.org/10.1166/jnn.2009.M39

Publication date: July 1, 2009

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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