Post-Growth Annealing Effects of Mg Doped GaAs Epitaxial Layers on Microstructural and Optical Properties

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The post-growth thermal annealing effects of Mg doped GaAs epitaxial layers on the microstructural and optical properties grown by molecular beam epitaxy (MBE) have been investigated. The properties of Mg doped GaAs are estimated after the process of rapid thermal annealing (RTA) in the temperature range of 600∼750 °C. The photoluminescence (PL) peak position of as-grown sample blueshifted from 1.473 to 1.485 eV as well as the pronounced enhancement in PL intensity by annealing at 600 °C. In the sample grown at the temperature of Ts = 475 °C, the full-width at half maximum (FWHM) of double crystal X-ray diffraction (DCXRD) decreased form 27 to 8 arcsec with increasing of annealing temperature (600∼700 °C). The crystalline quality variation of Mg doped GaAs layers by RTA is greatly dependent upon the doping level.


Document Type: Research Article


Publication date: July 1, 2009

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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