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Electrical Characteristics of Floating-Gate Memory Devices with Titanium Nanoparticles Embedded in Gate Oxides

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The electrical characteristics of titanium (Ti) nanoparticle-embedded metal-oxide-semiconductor (MOS) capacitors and metal-oxide-semiconductor field effect transistors (MOSFETs) with blocking Al2O3 layers are studied in this work. Ti nanoparticles were synthesized by a thermal deposition of Ti and by a subsequent thermal annealing procedure. The capacitance versus voltage (CV) curves obtained for a representative MOS capacitor embedded with Ti nanoparticles exhibit large flat-band voltage shifts, demonstrating the presence of charge storages in the Ti nanoparticles. The counterclockwise hysteresis and flat-band voltage shift observed from the CV curves imply that electrons are stored in a floating gate layer consisting of the Ti nanoparticles present between the tunneling oxide and control oxide layers in the MOS capacitor and that these stored electrons originate from the p-type Si substrate in inversion condition. Moreover, the source/drain current versus gate voltage curves for the Ti nanoparticle-embedded MOSFETs and the threshold voltage shift characteristics of program/erase time, endurance and retention are analyzed in this paper.


Document Type: Research Article


Publication date: March 1, 2009

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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