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Ultra-Low-k Thin Films of Polyhedral Oligomeric Silsesquioxane/Epoxy Nanocomposites via Covalent Layer-by-Layer Assembly

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Polyhedral oligomeric silsesquioxane nanocomposites thin films on silicon surfaces were prepared by covalent layer-by-layer (LbL) assembly using octakis(glycidyldimethylsiloxy)octasilsesquioxane (OG-POSS) and 4,4(hexafluoroisopropylidene)dianiline (HID) as building blocks. The layer thickness increased linearly with the layer numbers. An ultra-low dielectric constant of approximately 1.57 was found with the LbL thin film. A novel approach to fabricate ultra low-k materials is demonstrated.
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Keywords: DIELECTRIC CONSTANT; LAYER-BY-LAYER; LOW-K; NANOCOMPOSITE; POSS

Document Type: Research Article

Publication date: 2009-03-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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