Ultra-Low-k Thin Films of Polyhedral Oligomeric Silsesquioxane/Epoxy Nanocomposites via Covalent Layer-by-Layer Assembly
Polyhedral oligomeric silsesquioxane nanocomposites thin films on silicon surfaces were prepared by covalent layer-by-layer (LbL) assembly using octakis(glycidyldimethylsiloxy)octasilsesquioxane (OG-POSS) and 4,4(hexafluoroisopropylidene)dianiline (HID) as building blocks. The layer thickness increased linearly with the layer numbers. An ultra-low dielectric constant of approximately 1.57 was found with the LbL thin film. A novel approach to fabricate ultra low-k materials is demonstrated.
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Document Type: Research Article
Publication date: 2009-03-01
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