Ultra-Low-k Thin Films of Polyhedral Oligomeric Silsesquioxane/Epoxy Nanocomposites via Covalent Layer-by-Layer Assembly
Authors: Liu, Ying-Ling; Liu, Chuan-Shun; Chen, Wei-Hong; Chen, Shi-Yi; Wang, Ko-Shung; Hwu, Ming-Jyh
Source: Journal of Nanoscience and Nanotechnology, Volume 9, Number 3, March 2009 , pp. 1839-1843(5)
Publisher: American Scientific Publishers
Abstract:Polyhedral oligomeric silsesquioxane nanocomposites thin films on silicon surfaces were prepared by covalent layer-by-layer (LbL) assembly using octakis(glycidyldimethylsiloxy)octasilsesquioxane (OG-POSS) and 4,4(hexafluoroisopropylidene)dianiline (HID) as building blocks. The layer thickness increased linearly with the layer numbers. An ultra-low dielectric constant of approximately 1.57 was found with the LbL thin film. A novel approach to fabricate ultra low-k materials is demonstrated.
Document Type: Research Article
Publication date: March 1, 2009
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