Comparison of the Synthesis of Ge Nanocrystals in Hafnium Aluminum Oxide and Silicon Oxide Matrices
Abstract:Growth of germanium (Ge) nanocrystals in silicon (Si) oxide and hafnium aluminum oxide (HfAlO) is examined. In Si oxide, nanocrystals were able to form at annealing temperatures of 800 °C to 1000 °C. Nanocrystals formed at 800 °C were round and ∼8 nm in diameter, at 900 °C they become facetted and at 1000 °C they become spherical again. In HfAlO, at 800 °C nanocrystals formed are relatively smaller (∼3 nm in diameter) and lower in density. While at 900 °C and 1000 °C, nanocrystals did not form due to out-diffusion of Ge. Different nanocrystal formation characteristics in the matrices are attributed to differences in their crystallization temperatures.
Document Type: Research Article
Publication date: February 1, 2009
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