Dry Etching of Nanosized Ge1Sb2Te4 Patterns Using TiN Hard Mask for High Density Phase-Change Memory
Being able to pattern and etch chalcogenide materials in nanometer scale is essential for the integration of high density chalcogenide random access memory. We investigated dry etching methods for the patterning of Ge1Sb2Te4 films in CHF3/O2 gas mixture using reactive-ion etching system. The gas species CHF3/O2 can reach good etched features with smooth sidewall and a taper angle of 86°. The nanosized Ge1Sb2Te4 patterns were defined by electron-beam lithography using hydrogen silsesquioxane as negative type e-beam resist. A hard mask of TiN, to which the selectivity of Ge1Sb2Te4 is as high as 12, was chosen for employing a CHF3/O2 gas mixture for Ge1Sb2Te4 etching. The Ge1Sb2Te4 line with width of 170 nm could be successfully obtained with good profiles and uniformity using these optimized patterning conditions, which could be very helpful for fabricating high density chalcogenide random access memory based on Ge1Sb2Te4.
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Document Type: Research Article
Publication date: 2009-02-01
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- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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