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Local Structural and Electrical Properties of Ferroelectric Bi3.25La0.75Ti3O12 Thin Films on Pt

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Ferroelectric Bi3.25La0.75Ti3O12 (BLT) thin films have been grown by a sol–gel method. Annealing conditions after the drying process have been explored over a wide range of temperature. BLT thin films prepared on Pt/TiO2 coated SiO2/Si(100) were investigated by Raman scattering spectroscopy, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy. Raman spectra reveal the growth route of phase-formation of the BLT films. Ferroelectric domains in the thin films are observed by using AFM, registering the electrostatic force response of the thin films in the presence of a low ac field. It is found that the as-grown domain configuration and switching behavior are strongly dependent on growth temperature. Depth-profiling of the electronic states of Bi, Ti, and La atoms shows the oxidation during the growth.
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Keywords: ATOMIC FORCE MICROSCOPY; BLT THIN FILMS; RAMAN SPECTROSCOPY; X-RAY PHOTOELECTRON SPECTROSCOPY

Document Type: Research Article

Publication date: 2009-02-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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