Noise in ZnO Nanowire Field Effect Transistors

Authors: Xiong, Hao D.; Wang, Wenyong; Suehle, John S.; Richter, Curt A.; Hong, Woong-Ki; Lee, Takhee

Source: Journal of Nanoscience and Nanotechnology, Volume 9, Number 2, February 2009 , pp. 1041-1044(4)

Publisher: American Scientific Publishers

Buy & download fulltext article:

Price: $113.00 plus tax (Refund Policy)

Abstract:

The noise power spectra in ZnO nanowire field effect transistors (FETs) were experimentally investigated and showed a classical 1/f dependence. A Hooge's constant of 5 × 10⁻³ was estimated. This value is within the range reported for CMOS FETs with high-k dielectrics, supporting the concept that nanowires can be utilized for future beyond-CMOS electronic applications from the point of view of device noise properties. ZnO FETs measured in a dry O₂ environment displayed elevated noise levels compared to in vacuum. At low temperature, random telegraph signals are observed in the drain current.

Keywords: ZINC OXIDE; NANOWIRE; 1/F NOISE; RANDOM TELEGRAPH SIGNAL

Document Type: Research article

DOI: http://dx.doi.org/10.1166/jnn.2009.C082

Publication date: 2009-02-01

More about this publication?

Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
Editorial Board
Information for Authors
Subscribe to this Title
Terms & Conditions
ingentaconnect is not responsible for the content or availability of external websites