Hysteresis-Free Carbon Nanotube Field Effect Transistors Without Any Post-Treatment
Authors: Wang, Chuan; Fu, Yunyi; Guo, Ao; Liu, Jia; Guan, Lunhui; Shi, Zujin; Gu, Zhennan; Huang, Ru; Zhang, Xing
Source: Journal of Nanoscience and Nanotechnology, Volume 9, Number 2, February 2009 , pp. 1004-1007(4)
Publisher: American Scientific Publishers
Abstract:Out of hundreds of as-fabricated back-gated carbon nanotube field effect transistors we made, five devices which exhibit indiscernible hysteresis are found. The cause of these hysteresis-free devices is investigated based on the energy band and interface trap theory, and it is attributed to the bundling effect of single-walled carbon nanotubes which will result in a reduced bandgap in the single-walled carbon nanotube bundle compared with an isolated semiconducting carbon nanotube. A specific requirement of the SWNT bundle to satisfy the presumed explanation is also proposed.
Document Type: Research article
Publication date: 2009-02-01
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