Hysteresis-Free Carbon Nanotube Field Effect Transistors Without Any Post-Treatment

Authors: Wang, Chuan; Fu, Yunyi; Guo, Ao; Liu, Jia; Guan, Lunhui; Shi, Zujin; Gu, Zhennan; Huang, Ru; Zhang, Xing

Source: Journal of Nanoscience and Nanotechnology, Volume 9, Number 2, February 2009 , pp. 1004-1007(4)

Publisher: American Scientific Publishers

Buy & download fulltext article:

Price: $113.00 plus tax (Refund Policy)

Abstract:

Out of hundreds of as-fabricated back-gated carbon nanotube field effect transistors we made, five devices which exhibit indiscernible hysteresis are found. The cause of these hysteresis-free devices is investigated based on the energy band and interface trap theory, and it is attributed to the bundling effect of single-walled carbon nanotubes which will result in a reduced bandgap in the single-walled carbon nanotube bundle compared with an isolated semiconducting carbon nanotube. A specific requirement of the SWNT bundle to satisfy the presumed explanation is also proposed.

Keywords: CARBON NANOTUBE; CNTFET; HYSTERESIS; INTERFACE TRAPS

Document Type: Research article

DOI: http://dx.doi.org/10.1166/jnn.2009.C073

Publication date: 2009-02-01

More about this publication?

Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
Editorial Board
Information for Authors
Subscribe to this Title
Terms & Conditions
ingentaconnect is not responsible for the content or availability of external websites