Diffusion of Mn in ZnO Nanowires Annealed in Air
We studied diffusion of Mn in ZnO nanowires by means of field-emission scanning electron microscopy, transmission electron microscopy, X-ray diffraction, photoluminescence and Raman scattering spectroscopy. The Mn-diffused samples were prepared by covering synthesized ZnO nanowires
with a Mn chip and then annealing at temperatures between 200 and 1000 °C for 1 h in air. Microstructural analyses, and photoluminescence and Raman studies revealed that Mn atoms started diffusing in ZnO nanowires at 800 °C. The annealing-temperature increase up to 1000 °C led
to a strong diffusion of Mn in the ZnO host lattice, which caused the blueshift of the ultra-violet emission. Concurrently, recored Raman scattering spectra showed some additional Mn-related modes. The origin of these lines was discussed in detail.
Keywords: LUMINESCENCE; PREPARATION; RAMAN SPECTROSCOPY; ZNMNO NANOWIRES
Document Type: Research Article
Publication date: 01 February 2009
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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