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Resistance Switching Characteristics of Zirconium Oxide Containing Gold Nanocrystals for Nonvolatile Memory Applications

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Abstract:

Resistance switching characteristics of ZrO2 films with gold nanocrystals (nc-Au) embedded are investigated for nonvolatile memory applications. The sandwiched structure of top Au electrode/ZrO2 (with nc-Au embedded)/n+ Si exhibits two stable resistance states (high-resistance state and low-resistance state). By applying proper voltage bias, resistance switching from one state to the other can be achieved. This resistance switching behavior is reproducible and the ratio between the high and low resistance states can be as high as two orders. A long memory retention time and over 102 times DC sweep cycles are demonstrated. The ZrO2 films employing gold nanocrystals are promising to be used in the nonvolatile memory devices.

Keywords: NONVOLATILE MEMORY; RESISTANCE SWITCHING; RESISTIVE RANDOM ACCESS MEMORY (RRAM); ZRO2

Document Type: Research Article

DOI: https://doi.org/10.1166/jnn.2009.C011

Publication date: 2009-02-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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