Horizontally-Aligned Single-Walled Carbon Nanotubes on Sapphire
Recently, we discovered the horizontally-aligned growth of single-walled carbon nanotubes (SWCNTs) on R- and A-plane sapphire substrates, which we call "atomic arrangement-programmed growth (AAP growth)." This is a unique method because the growth direction of SWCNTs is determined by the crystallographic direction of the sapphire surface. In this paper, we report on the characterization of the aligned SWCNTs by polarized Raman and electron transport measurements, and on the effect of the step/terrace structure formed on sapphire surface. These results may open up a possibility of creating the artificial SWCNT network, which can be applied to high-performance electronics.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
No Article Media
Document Type: Research Article
Publication date: 01 November 2008
More about this publication?
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Terms & Conditions
- Ingenta Connect is not responsible for the content or availability of external websites