Synthesis of Al-Catalyzed Si Nanowires Using the Al Remaining After Removal of Anodic Aluminum Oxide

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Abstract:

Single-crystal, Al-catalyzed silicon nanowires were grown under atmospheric pressure using the dimpled feature of the Al metal that remained after removal of an anodic aluminum oxide (AAO) template directly formed on a Si substrate. Upon annealing in a hydrogen-rich atmosphere, the dimpled morphology of Al was transformed into a smooth, rounded shape in which Si nanodots were periodically embedded due to Si migration from the substrate. The positions of the nanodots were exactly the same as the positions of sawtooth features on the dimpled surface. Although Al-catalyzed silicon nanowires have been known to grow only under vacuum due to the tendency of Al to oxidize, these silicon nanodots, surrounded by residual Al, showed excellent resistance to oxidation under atmospheric pressure. These nanodots were also capable of acting as catalysts for the growth of nanowires, and played a role in determining the diameter of the nanowires. A thinner residual Al layer made it easier to form Si nanodots while reducing the size of the nanodots, which subsequently led to the growth of nanowires with smaller diameters and better crystalline morphology.

Keywords: AL CATALYST; ANODIC ALUMINUM OXIDE; SI NANOWIRE

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2008.481

Publication date: November 1, 2008

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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