@article {Park:2008:1533-4880:5929,
title = "Ambient Air Effects on Electrical Transport Properties of ZnO Nanorod Transistors",
journal = "Journal of Nanoscience and Nanotechnology",
parent_itemid = "infobike://asp/jnn",
publishercode ="asp",
year = "2008",
volume = "8",
number = "11",
publication date ="2008-11-01T00:00:00",
pages = "5929-5933",
itemtype = "ARTICLE",
issn = "1533-4880",
eissn = "1533-4899",
url = "https://www.ingentaconnect.com/content/asp/jnn/2008/00000008/00000011/art00050",
doi = "doi:10.1166/jnn.2008.257",
keyword = "ZNO, ELECTRICAL TRANSPORT PROPERTIES, FIELD EFFECT TRANSISTOR, NANORODS",
author = "Park, Jae Young and Kim, Ju-Jin and Kim, Sang Sub",
abstract = "ZnO nanorod (NR) transistors were fabricated in a back-gated structure, and their electrical transport properties were investigated as a function of air pressure. A large shift (19.4 V) of threshold voltage V
t, g toward negative gate bias is observed as the air pressure
decreases to 9.06 \texttimes 104 Pa. The shift of V
t, g and the change in the flowing current between the source and drain electrode with changing the air pressure are fully reversible. The adsorption and desorption of oxygen molecules and/or OH groups in air
are likely to be responsible for the reversibility. Most importantly, the electron concentration and the flowing current rapidly change only in a vacuum regime less than a certain pressure as likely as 1.33 \texttimes 101 Pa. In contrast, in the low vacuum regime (>1.33 \texttimes
101 Pa) ZnO NR transistors are insensitive to the change of air pressure. This observation indicates that nanosized vacuum sensors based on ZnO NR transistors will be effective only in the high vacuum regime.",
}