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Scanning Probe Oxidation Lithography on Ta Thin Films

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Abstract:

A Semi-Contact Scanning Probe Lithography Technique (SC-SPL) has been applied to create nano-oxide patterns on Ta thin films grown by DC magnetron sputtering method on SiO2/Si substrates. The height and linewidth profiles of nano-oxide lines created by a conductive AFM tip on Ta film surfaces were measured as a function of applied voltage, oxidation time, humidity, and tip apex curvature. The AFM surface measurements show that the height of the oxides increases linearly with increasing voltage; but there was no oxide growth, when less than 4 V was applied even at 85% relative humidity. Electrical measurements were performed and the resistivities of the TaOx layer and Ta film were obtained as 5.76 × 108 and 1.4 × 10−5 Ohm-cm, respectively.

Keywords: DIELECTRIC THIN FILMS; ELECTRICAL RESISTIVITY; INSULATING THIN FILMS; NANO-OXIDATION; SCANNING PROBE LITHOGRAPHY; TANTALUM OXIDE; TANTALUM THIN FILM

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2008.324

Publication date: November 1, 2008

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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