Scanning Probe Oxidation Lithography on Ta Thin Films
Abstract:A Semi-Contact Scanning Probe Lithography Technique (SC-SPL) has been applied to create nano-oxide patterns on Ta thin films grown by DC magnetron sputtering method on SiO2/Si substrates. The height and linewidth profiles of nano-oxide lines created by a conductive AFM tip on Ta film surfaces were measured as a function of applied voltage, oxidation time, humidity, and tip apex curvature. The AFM surface measurements show that the height of the oxides increases linearly with increasing voltage; but there was no oxide growth, when less than 4 V was applied even at 85% relative humidity. Electrical measurements were performed and the resistivities of the TaOx layer and Ta film were obtained as 5.76 × 108 and 1.4 × 10−5 Ohm-cm, respectively.
Document Type: Research Article
Publication date: November 1, 2008
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