Preparation of Phosphorus Doped Hydrogenated Microcrystalline Silicon Thin Films by Inductively Coupled Plasma Chemical Vapor Deposition and Their Characteristics for Solar Cell Applications
Abstract:Intrinsic and phosphorus-doped hydrogenated microcrystalline silicon (c-Si:H) films were prepared using inductively coupled plasma chemical vapor deposition (ICP-CVD) method. Structural, electrical and optical properties of these films were studied as a function of silane concentration, ICP source power and PH3/SiH4 gas ratio. Characterization of these films from Raman spectroscopy and X-ray diffraction revealed that the conductive film exists in microcrystalline phase embedded in an amorphous network. The condition of electrical properties (d: ∼10−7 S/cm, ph: −10−4 S/cm) and activation energy (0.55 eV), satisfied with properties of intrinsic c-Si:H, was obtained at 1200 W of ICP power and 2% of silane concentration, respectively. At PH3/SiH4 gas ratio of 0.09%, dark conductivity has a maximum value of ∼18.5 S/cm and optical bandgap also a maximum value of ∼2.39 eV. The deposition rate was not satisfactory (4.9 Å/s) at same condition.
Document Type: Research Article
Publication date: 2008-10-01
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