Improved Light Extraction Efficiency in GaN-Based Light Emitting Diode by Nano-Scale Roughening of p-GaN Surface

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Improvement in light extraction efficiency of Ultra Violet-Light Emitting Diode (UV-LED) is achieved by nano-scale roughening of p-type Gallium Nitride (p-GaN) surface. The process of surface roughening is carried out by using self assembled gold (Au) nano-clusters with support of nano-size silicon-oxide (SiO2) pillars on p-GaN surface as a dry etching mask and by p-GaN regrowth in the regions not covered by the mask after dry etching. Au nano-clusters are formed by rapid thermal annealing (RTA) process carried out at 600 °C for 1 min using 15 nm thick Au layer on top of SiO2. The p-GaN roughness is controlled by p-GaN regrowth time. Four different time values of 15 sec, 30 sec, 60 sec and 120 sec are considered for p-GaN regrowth. Among the four different p-GaN regrowth time values 30 sec regrown p-GaN sample has the optimum roughness to increase the electroluminescence (EL) intensity to a value approximately 60% higher than the EL intensity of a conventional LED.


Document Type: Research Article


Publication date: October 1, 2008

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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