Simulation Study of the Scaling Behavior of Top-Gated Carbon Nanotube Field Effect Transistors

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Abstract:

Device simulations on three-dimensional top-gated carbon nanotube field effect transistors (CNTFETs) have been performed by considering the quantum transport described in the framework of non-equilibrium Green's function method. Device characteristics of various top-gated CNTFETs, such as Schottky-barrier CNTFETs, CNTFETs with doped source and drain, and tunnel-FET-like CNTFETs, have been examined, focusing on their scaling behavior as the channel length is ultimately reduced down to a few nanometers. Comparison with coaxially-gated devices is also made.

Keywords: CARBON NANOTUBE; DEVICE SIMULATION; FIELD EFFECT TRANSISTORS; NON-EQUILIBRIUM GREEN'S FUNCTION

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2008.1437

Publication date: October 1, 2008

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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