Phenyl-Naphthyl Amine Effect of New Phenothiazine Derivatives with High Tg for Hole Injection and Hole Transporting Materials
Authors: Kim, Soo-Kang; Lee, Ji-Hoon; Park, Jong-Wook
Source: Journal of Nanoscience and Nanotechnology, Volume 8, Number 10, October 2008 , pp. 5247-5251(5)
Publisher: American Scientific Publishers
Abstract:We synthesized a new HIL and HTL materials by using phenothiazinly moiety, 1,4-diphenothiazyl-benzene [DPtzB], 3′,7′,3″,7″-tetrakis(N-phenyl-2-naphthylamine)-1,4-diphenothiazyl-benzene [PNA-DPtzB]. Synthesized materials exhibited high Tg in the range of 175–202 °C. These values are much better than commonly used hole transporting materials (2-TNATA and NPB). The OLED device that used DPtzB as a HIL showed the highest efficiency of 4.31 cd/A at 10 mA/cm2.
Document Type: Research Article
Publication date: October 1, 2008
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