Phenyl-Naphthyl Amine Effect of New Phenothiazine Derivatives with High T g for Hole Injection and Hole Transporting Materials
We synthesized a new HIL and HTL materials by using phenothiazinly moiety, 1,4-diphenothiazyl-benzene [DPtzB], 3′,7′,3″,7″-tetrakis(N-phenyl-2-naphthylamine)-1,4-diphenothiazyl-benzene [PNA-DPtzB]. Synthesized materials exhibited high T g in the range of 175–202 °C. These values are much better than commonly used hole transporting materials (2-TNATA and NPB). The OLED device that used DPtzB as a HIL showed the highest efficiency of 4.31 cd/A at 10 mA/cm2.
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Document Type: Research Article
Publication date: 2008-10-01
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