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The Determination of Modified Barrier Heights in Ti/GaN Nano-Schottky Diodes at High Temperature

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We have investigated the size-effect of the nano-Schottky diodes on the electrical transport properties and the temperature-dependent current transport mechanism in a metal-semiconductor nanowire junction (a Ti/GaN nano-Schottky diode) using current–voltage characterization in the range of 300–423 K. We found that the modified mean Schottky barrier height (SBH) was ∼0.7 eV with a standard deviation of ∼0.14 V using a Gaussian distribution model of the barrier heights. The slightly high value of the modified mean SBH (∼0.11 eV) compared to the results from the thin-film based Ti/GaN Schottky diodes could be due to an additional oxide layer at the interface between the Ti and GaN nanowires. Moreover, we found that the abnormal behavior of the barrier heights and the ideality factors in a Ti/GaN nano-Schottky diode at a temperature below 423 K could be explained by a combination of the enhancement of the tunneling current and a model with a Gaussian distribution of the barrier heights.
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Keywords: A GAUSSIAN DISTRIBUTION OF THE BARRIER HEIGHT; GALLIUM NITRIDE NANOWIRES (GAN NWS); INHOMOGENEOUS SCHOTTKY BARRIER HEIGHT; NANO-SCHOTTKY DIODES; THERMIONIC EMISSION (TE)

Document Type: Research Article

Publication date: 2008-10-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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