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Fabrication and Characterization of a Double Quantum Dot Structure

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We report the fabrication and characterization of a new type of double quantum dot (QD) structure. We utilize standard CMOS processing steps without any modification to fabricate the double QD. We form three CMOS poly-Si gates with oxide sidewall spacers in series on a silicon-on-insulator nanowire. The QDs are defined by implanted n+ region between the finger gates, and no negative bias on the finger gates is needed. The sidewall spacers act as implantation masks and the size of the QD is smaller than the lithographic spacing between two finger gates. Characterization results exhibit clear Coulomb oscillations with two peak splitting and saw-tooth shaped Coulomb diamond. The simulation based on the model of single electron tunneling through double QDs reproduces the measured results with reasonable parameters.
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Document Type: Research Article

Publication date: 2008-10-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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