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Preparation of Antimony Films by Cyclic Pulsed Chemical Vapor Deposition

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Cyclic-pulsed plasma-enhanced chemical vapor deposition (PECVD) for the formation of antimony (Sb) thin films was investigated using Sb(i-C3H7)3 and H2 plasma at temperatures of 200–275 °C. The effects of deposition temperature on the film properties, such as resistivity, surface roughness, and crystallinity were examined. The film growth rate (thickness/cycle) was found to be in the range of 0.10–0.5 nm/cycle. High substrate temperatures tended to promote low resistivity, high purity, and smooth surface morphology of the films, compared to low substrate temperatures. All of the deposited films were polycrystalline, with higher deposition temperatures yielding a higher crystallinity in the Sb films.
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Document Type: Research Article

Publication date: 01 October 2008

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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