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Electro-Thermal Analysis of Nano Scale PRAM with U Shaped Bottom Electrode

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Abstract:

In this paper, we have investigated the phase change memory device with U-shaped bottom electrode using three-dimensional finite element analysis tool. From the simulation, the reset current of PRAM with U-shaped bottom electrode is greatly reduced, compared with the conventional device. And the experimental result clearly shows that the PRAM with U-shaped bottom electrode has 35% smaller RESET current, compared with the conventional PRAM device.

Keywords: BOTTOM ELECTRODE; FINITE ELEMENT ANALYSIS; PHASE CHANGE RANDOM ACCESS MEMORY; RESET CURRENT; U SHAPE

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2008.1348

Publication date: October 1, 2008

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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