Electro-Thermal Analysis of Nano Scale PRAM with U Shaped Bottom Electrode
Authors: Choi, Hong Kyw; Jang, Nakwon; Park, Young Sam; Yoon, Sung Min; Lee, Seung Yun; Yu, Byoung Gon; Kim, Hong Seung
Source: Journal of Nanoscience and Nanotechnology, Volume 8, Number 10, October 2008 , pp. 4930-4933(4)
Publisher: American Scientific Publishers
Abstract:In this paper, we have investigated the phase change memory device with U-shaped bottom electrode using three-dimensional finite element analysis tool. From the simulation, the reset current of PRAM with U-shaped bottom electrode is greatly reduced, compared with the conventional device. And the experimental result clearly shows that the PRAM with U-shaped bottom electrode has 35% smaller RESET current, compared with the conventional PRAM device.
Document Type: Research Article
Publication date: October 1, 2008
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Terms & Conditions
- ingentaconnect is not responsible for the content or availability of external websites