Possible Magnetism of Be-Doped Boron Nitride Nanotubes
Authors: Rahman, Gul; Hong, Soon Cheol
Source: Journal of Nanoscience and Nanotechnology, Volume 8, Number 9, September 2008 , pp. 4711-4713(3)
Publisher: American Scientific Publishers
Abstract:We studied the electronic and magnetic properties of pristine and Be-doped (5, 5) boron nitride (BN) nanotubes using density functional theory within a generalized gradient approximation. We found that the pristine (5, 5) BN nanotube is an indirect band gap material, which is in agreement with previous findings. Doping with Be induces spontaneous magnetization (∼1 B/Be atom) in the (5, 5) BN nanotube. The defect states are not localized to the Be atoms themselves, but spread out over their neighboring B and N atoms. In particular, the system becomes a half metal when Be is substituted for B.
Document Type: Research Article
Publication date: September 1, 2008
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Terms & Conditions
- ingentaconnect is not responsible for the content or availability of external websites