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Photo-Patternable Titanium Doped Organic–Inorganic Hybrid Gate Dielectric in Organic Thin Film Transistors

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Abstract:

Solution processable and photo-patternable titanium doped organic–inorganic hybrid material (MDT hybrimer) was prepared by simple sol–gel reaction for the gate dielectrics in organic thin film transistors (OTFTs). The MDT hybrimer is a typical nanocomposite which is fabricated via UV cross-linking of the nano-sized organo-oligosiloxanes. The photo-patternability of the MDT thin films was investigated using the UV light. The surface and electrical properties of MDT thin film were also investigated. The pentacene-based OTFT with MDT gate dielectrics was fabricated by using the top contact geometry. It is found that the OTFT with the MDT gate dielectrics showed a small hysteresis and good performance. The filed-effect mobility, threshold voltage, subthreshold slope and on/off current ratio of OTFT with MDT gate dielectric were 0.66 cm2V−1s−1, −14 V, 1.6 Vdec.−1, and 3 × 106, respectively.

Keywords: GATE DIELECTRICS; ORGANIC THIN FILM TRANSISTORS; ORGANIC-INORGANIC HYBRID MATERIALS

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2008.IC27

Publication date: September 1, 2008

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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