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Silicon Nanocluster Prepared Using Ion Beam Mixing Technique

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In this work, we present the results of modification of absorption band gap of Silicon nanoclusters (Si-nc) prepared by ion beam mixing on pre-irradiated fused silica. 30keV Ar+ ions at fluences of 5 × 1016 to 4 × 1017 cm−2 were used to create defects in fused silica glass before introducing Si atoms in the substrate. Si was introduced in the substrates by ion beam mixing using 30keV Ar+ ions at fluence 1 × 1017 cm−2. From UV-Vis absorption spectra, band-gap of Si-nc has been determined for samples prepared at different ion beam-mixing parameters. The absorption edge shifts towards higher energies and size of the silicon nanoclusters decreases with an increase in ion beam fluence used for pre-mixing irradiation.


Document Type: Research Article


Publication date: August 1, 2008

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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