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keV Ion-Induced Effective Surface Modifications on InP

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Abstract:

In the present study, we have analyzed the changes in surface morphology leading to formation of periodic structures known as ripples which arise due to an interplay between sputtering and surface diffusion. The 1.5 keV Ar atoms with a flux of 14.8 mA/cm2 are used in the present study. The InP(100) samples were bombarded at an incidence angle of 45° to the normal at a base pressure of 1 × 10−6 Torr at room temperature with fluences varying from 4 × 1016 to 3.2 × 1017 atoms/cm2. The rippled InP(100) surface was characterized with AFM. An increase in the ripple wavelengths, from 60 nm to 150 nm with the fluence has been observed. The width of the ripples varies from 38 nm to 128 nm and ripple amplitude varies from 0.8 nm to 16 nm with increasing fluence. One can control the dimension of the ripples in nano scale by controlling the fluence. Scaling studies have been performed to understand the mechanism responsible for such kind of surface evolution. The roughness parameter, α was found to be between 0.65 to 0.75 and the growth parameter, , as 1.14±0.12. The XPS characterization has also been employed to study the changes in the behavior of the InP with varying fluence.

Keywords: ATOMIC FORCE MICROSCOPY; INP; RIPPLE FORMATION; SPUTTERING; XPS

Document Type: Research Article

DOI: https://doi.org/10.1166/jnn.2008.AN13

Publication date: 2008-08-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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