Electronic Structure of Carbon Doped Boron Nitride Nanotubes: A First-Principles Study
We determine atomic and electronic structures of arm-chair and zigzag boron nitride nanotubes (BN-NTs) of different diameters using first-principles pseudopotential-based density functional theory calculations. We find that the structure of BN-NTs in bundled form is slightly different from that of the isolated BN-NTs, reflecting on the inter-tube interactions. Effects of carbon doping on the electronic structure of (5,5) and (5,0) BN-NTs are determined: carbon substitution either at B-site, being energetically very stable, or at N-site can yield magnetically polarized semiconducting state, whereas carbon substitution at neighbouring B and N sites yields a non-magnetic insulating structure.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
Document Type: Research Article
Publication date: 2008-08-01
More about this publication?
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Terms & Conditions
- Ingenta Connect is not responsible for the content or availability of external websites