High-Temperature Stability of Silicon Carbide Nanowires

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The paper reports morphology and structure transitions of silicon carbide (SiC) nanowires during high temperature annealing; the as-prepared nanowires are in the form of SiC core and SiO2 shell. The transition temperature is about 1200 °C, 600 °C lower than that of SiC microfibers, and it starts with the formation of junctions of individual nanowires. The junctions grow into webs while the crystalline SiC cores of the nanowires oxidize. The growth and the oxidation eventually lead to the formation of an oxide film, when the transition completes. The thermal stability and the transition mechanisms of SiC nanowires are critical to their applications in high temperature environments.


Document Type: Short Communication

DOI: http://dx.doi.org/10.1166/jnn.2008.452

Publication date: August 1, 2008

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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