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What Silicon Nanocluster is Most Likely Formed in Etching Experiments? Theoretical DFT Study

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Abstract:

Density functional calculations at the B3LYP/6-31G* level were performed for Si nanoclusters of ca.1 nm in size. The structural, energetic, electronic as well as the estimated absorption spectra by the time-dependent DFT (TDDFT) calculations using varied functionals and basis sets for the representative cluster models are all in favor of the formation of most probable Si35H36 nanocluster in recent electrochemical etching experiments. The nanostructure has a complete H-termination at the borderline regions and lacks from the presence of any defects like surface Si—Si dimer units formed via self-healing of dangling Si—Si bonds or from any relatively short H…H contacts.

Keywords: B3LYP/6-31G ASTERISK; H-TERMINATION; SI NANOCLUSTER; TDDFT

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2008.113

Publication date: July 1, 2008

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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