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AC Dielectrophoresis Alignment of ZnO Nanowires and Subsequent Use in Field-Effect Transistors

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We report on the dielectrophoresis (DEP) characterization of single crystalline zinc oxide (ZnO) nanowires with variations of the AC electric field and frequency. The alignment yield rate of ZnO nanowires in the gap over the 200 metal electrodes increased with increasing AC electric field and also changed by the applying frequency. Moreover, we demonstrated that the DEP prepared multi-ZnO nanowires field-effect transistors (FETs) exhibited excellent performance with a transconductance of ∼3 S and a high drain current of ∼2.7 × 10−6 A (VDS = 5 V, VG = 20 V).
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Keywords: DIELECTROPHORESIS (DEP); FIELD-EFFECT TRANSISTOR (FET); NANOWIRES (NWS); ZINC OXIDE (ZNO)

Document Type: Research Article

Publication date: 2008-07-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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