Effect of Annealing on Morphology and Photoluminescence of -Ga2O3 Nanostructures
A novel method was applied to prepare one-dimensional -Ga2O3 nanostructure films. In this method, -Ga2O3 nanostructures have been successfully synthesized on Si(111) substrates through annealing sputtered Ga2O3/Mo films for differernt time under flowing ammonia. The as-synthesized -Ga2O3 nanostructures were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence (PL) spectrum. The results show that the formed nanostructures are single-crystalline Ga2O3 with monoclinic structure. The annealing time of the samples has an evident influence on the morphology and optical property of the nanostructured -Ga2O3 synthesized. The representative photoluminescence spectrum at room temperature exhibits a strong and broad emission band centered at 411.5 nm and a relatively weak emission peak located at 437.6 nm. The growth mechanism of the -Ga2O3 nanostructured materials is also discussed briefly.
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Document Type: Research Article
Publication date: 2008-07-01
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