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A Method to Determine the Strain and Nucleation Sites of Stacked Nano-Objects

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Abstract:

We determine the compositional distribution with atomic column resolution in a horizontal nanowire from the analysis of aberration-corrected high resolution Z-contrast images. The strain field in a layer capping the analysed nanowire is determined by anisotropic elastic theory from the resulting compositional map. The reported method allows preferential nucleation sites for epitaxial nanowires to be predicted with high spatial resolution, as required for accurate tuning of desired optical properties. The application of this method has been exemplified in this work for stacked InAs(P) horizontal nanowires grown on InP separated by 3 nm thick InP layers, but we propose it as a general method to be applied to other stacked nano-objects.

Keywords: HIGH RESOLUTION Z-CONTRAST IMAGING; NANO-OBJECT; NANOWIRE; SEMICONDUCTOR NANOSTRUCTURE; STRAIN

Document Type: Research Article

DOI: https://doi.org/10.1166/jnn.2008.123

Publication date: 2008-07-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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