Aligned Er-Doped ZnO Nanorod Arrays with Enhanced 1.54 m Infrared Emission
Vertically aligned Er-doped ZnO nanorod arrays with sharp and intense 1.54 m infrared emission have been fabricated on Si substrates through a well controlled spin-coating and annealing process. The synthesis method is advantageous for synthesizing ZnO nanostructures free from structural defects, capability for large-scale production, minimum equipment requirement and product homogeneity. Er atoms were found to incorporate into ZnO lattice from XRD, ESCA, TEM, STEM/EDS and PL measurements. The single-crystal Er-doped nanorods maintained their high microstructural quality after annealing for 4 hr at 800 °C. The intensity of 1.54 m infrared emission was found to be correlated with the deep level green emission. The enhanced luminescence intensity and best ever narrow wavelength distribution of Er-doped ZnO nanorod arrays at 1.54 m emission will be conductive to applications in optoelectronic devices and optical communications.
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Document Type: Research Article
Publication date: 2008-07-01
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