Composition Controlled Synthesis and Raman Analysis of Ge-Rich SixGe1x Nanowires

$113.00 plus tax (Refund Policy)

Buy Article:


Here, we report the synthesis of SixGe1–x nanowires with x values ranging from 0 to 0.5 using bulk nucleation and growth from larger Ga droplets. Room temperature Raman spectroscopy is shown to determine the composition of the as-synthesized SixGe1–x nanowires. Analysis of peak intensities observed for Ge (near 300 cm–1) and the Si-Ge alloy (near 400 cm–1) allowed accurate estimation of composition compared to that based on the absolute peak positions. The results showed that the fraction of Ge in the resulting SixGe1–x alloy nanowires is controlled by the vapor phase composition of Ge.
More about this publication?
  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
  • Editorial Board
  • Information for Authors
  • Subscribe to this Title
  • Terms & Conditions
  • ingentaconnect is not responsible for the content or availability of external websites
Related content



Share Content

Access Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content
Cookie Policy
Cookie Policy
ingentaconnect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more