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STM Study of Au Adsorption on Si(111)-7 × 7 Surface: Voltage and Temperature Dependence

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Abstract:

We presented the scanning tunneling microscopy (STM) results on the study of Au adsorption at Si(111)-7 × 7 reconstructed surface. The voltage-dependent STM measurements indicated that there are at least three kinds of Au clusters and two types of single Au atoms adsorption on Si(111)-7 × 7 surface with Au coverage of about 0.2 monolayer. After the Au adsorbed Si surface was annealed at about 250 °C, the adsorbed Au clusters would diffuse into the Si substrate, and consequently create surface defects on the Si substrate. Sequentially annealed the sample at about 500 °C, the diffused Au would emerge out again and form larger 3-dimension Au clusters at the Si surface.

Keywords: AU ADSORPTION; SI; STM

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2008.149

Publication date: June 1, 2008

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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