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Synthesis of Nano-Dimensional ZnO and Ga Doped ZnO Thin Films by Vapor Phase Transport and Study as Transparent Conducting Oxide

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Abstract:

We report synthesis of polycrystalline ZnO and Ga doped ZnO (ZnO:Ga) thin films (∼80 nm) on Si and quartz substrates in a non-vacuum muffle furnace, a simple and cost-effective route, without any catalyst/reactive carrier gases, at relatively low processing temperature of 550 °C. The crystalline phases of the films are identified by grazing angle X-ray diffraction (GAXRD). The growth of ZnO films is examined with scanning electron microscope (SEM) as a function of deposition time. An optical transmission of ∼90% is observed for pure ZnO film having a resistivity of ∼2.1 Ω-cm as measured by van der Pauw technique. Doping with Ga results in single phase ZnO:Ga films, retaining an optical transmission of about 80% and three orders of magnitude decrease in resistivity as compared to pure ZnO film.

Keywords: FURNACE; GA DOPED ZNO; GAXRD; OPTICAL TRANSMISSION; RESISTIVITY; SEM; TRANSPARENT CONDUCTING OXIDE; ZNO

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2008.220

Publication date: May 1, 2008

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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