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Effect of Ta Nanobarrier in Magnetron Sputtering of Nd-Doped SrBi2Ta2O9 Thin Films

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SrBi2Ta2O9 (SBT) is a bismuth layered perovskite with attractive ferroelectric properties for random access memory applications. Our previous studies showed that Nd-doped SBT (SNBT) thin films exhibited an improved remnant polarization and reduced coercivity. This paper concentrates on the effect of Ta nanobarrier in between the SNBT and the Pt layers. Without the nanobarrier, severe bismuth diffusion is revealed by the secondary ion mass spectroscopy. However, with a nano layer (up to 2 nm) of Ta metal, the interfacial diffusion is effectively suppressed even at 800 °C. Details of the composition profiling, film crystallinity and remnant polarization are discussed in view of the nanobarrier thickness.


Document Type: Research Article


Publication date: 2008-05-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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