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The Effects of Oxygen Content on Bonding Configurations and Properties of Low-k Organosilicate Glass Dielectric Films

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The low dielectric constant SiOC:H films of plasma enhanced chemical vapor deposition method have been developed with various precursor ratio. The reduction of the dielectric constant has been achieved by increasing the porosity in the films through the change of precursor ratio. In order to clarify the relation between dielectric constant and film porosity, the small angle X-ray scattering technique has been applied for characterizing pore size in the porous low-k dielectric films. The effects of the oxygen on the bonding configuration and electrical properties were investigated by adjusting TMS/O2 gas ratios. The porous SiOC:H film displays the small pore sizes and lower dielectric constant. It is found that the pore size of SiOC:H film is significant smaller than 1 nm and the pore size attributed to Si–O–Si cage structure change.


Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2008.608

Publication date: May 1, 2008

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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