Synthesis of Nanoscale Copper Nitride Thin Film and Modification of the Surface Under High Electronic Excitation
Abstract:Nanoscale (∼90 nm) Copper nitride (Cu3N) films are deposited on borosilicate glass and Si substrates by RF sputtering technique in the reactive environment of nitrogen gas. These films are irradiated with 200 MeV Au15+ ions from Pelletron accelerator in order to modify the surface by high electronic energy deposition of heavy ions. Due to irradiation (i) at incident ion fluence of 1 × 1012 ions/cm2 enhancement of grains, (ii) at 5 × 1012 ions/cm2 mass transport on the films surface, (iii) at 2 × 1013 ions/cm2 line-like features on Cu3N/glass and nanometallic structures on Cu3N/Si surface are observed. The surface morphology is examined by atomic force microscope (AFM). All results are explained on the basis of a thermal spike model of ion-solid interaction.
Document Type: Research Article
Publication date: 2008-05-01
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