Synthesis of Nanoscale Copper Nitride Thin Film and Modification of the Surface Under High Electronic Excitation
Authors: Ghosh, S.; Tripathi, A.; Ganesan, V.; Avasthi, D.K.
Source: Journal of Nanoscience and Nanotechnology, Volume 8, Number 5, May 2008 , pp. 2505-2508(4)
Publisher: American Scientific Publishers
Abstract:Nanoscale (∼90 nm) Copper nitride (Cu3N) films are deposited on borosilicate glass and Si substrates by RF sputtering technique in the reactive environment of nitrogen gas. These films are irradiated with 200 MeV Au15+ ions from Pelletron accelerator in order to modify the surface by high electronic energy deposition of heavy ions. Due to irradiation (i) at incident ion fluence of 1 × 1012 ions/cm2 enhancement of grains, (ii) at 5 × 1012 ions/cm2 mass transport on the films surface, (iii) at 2 × 1013 ions/cm2 line-like features on Cu3N/glass and nanometallic structures on Cu3N/Si surface are observed. The surface morphology is examined by atomic force microscope (AFM). All results are explained on the basis of a thermal spike model of ion-solid interaction.
Document Type: Research article
Publication date: 2008-05-01
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Terms & Conditions
- ingentaconnect is not responsible for the content or availability of external websites