Current Rectification in a Single Silicon Nanowire p–n Junction

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Diodes within individual silicon nanowires were fabricated by doping them during growth to produce p–n junctions. Electron beam lithography was then employed to contact p- and n-doped ends of these nanowires. The current–voltage (I–V) measurements showed diode-like characteristics with a typical threshold voltage (Vt) of about 1 V and an ideality factor (n) of about 3.6 in the quasi-neutral region. The reverse bias I–V measurement showed an exponential behavior, indicating tunneling as the current leakage mechanism.


Document Type: Research Article


Publication date: May 1, 2008

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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