Memory hysteresis, memory window and charge retention behaviour of an Al/Si3N4/Si structure with Si nanocrystals embedded in the Si3N4 layer are studied by fitting the results of a computer simulation to the experimental ones using simple analytical expressions. It is concluded that the current through the control nitride layer during a charging voltage pulse is higher than the steady-state current. At high voltage pulses other effects, as transients, additional current mechanisms or charge injection and trapping from the metal side, has to be considered. It is also obtained that the retention behaviour of the structure were determined by the Fowler-Nordheim tunneling.
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