Simulation of Memory Behaviour of a Non-Volatile Si3N4 Structure ContainingSi Nanocrystals

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Memory hysteresis, memory window and charge retention behaviour of an Al/Si3N4/Si structure with Si nanocrystals embedded in the Si3N4 layer are studied by fitting the results of a computer simulation to the experimental ones using simple analytical expressions. It is concluded that the current through the control nitride layer during a charging voltage pulse is higher than the steady-state current. At high voltage pulses other effects, as transients, additional current mechanisms or charge injection and trapping from the metal side, has to be considered. It is also obtained that the retention behaviour of the structure were determined by the Fowler-Nordheim tunneling.


Document Type: Research Article


Publication date: February 1, 2008

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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