Memory structures with an embedded sheet of separated Si nanocrystals were prepared by low pressure chemical vapour deposition using a Si3N4 control layer and different SiO2 or Si3N4 tunnel layers. It was obtained that Si nanocrystals improve the charging behaviour of the MNOS structures. Memory window width of 1.3 Vand 2.0 V were obtained for pulse amplitudes of ±9 V and ±10 V, 100 ms, respectively. The extrapolated memory window after 10 years is about 15% of its initial value.
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