If you are experiencing problems downloading PDF or HTML fulltext, our helpdesk recommend clearing your browser cache and trying again. If you need help in clearing your cache, please click here . Still need help? Email help@ingentaconnect.com

Effect of Ion Doping with Donor and Acceptor Impurities on Intensity and Lifetime of Photoluminescence from SiO2 Films with Silicon Quantum Dots

$113.00 plus tax (Refund Policy)

Buy Article:

Abstract:

Doping with donor and acceptor impurities is an effective way to control light emission originated from quantum-size effect in Si nanocrystals. Combined measurements of photoluminescence intensity and kinetics give valuable information on mechanisms of the doping influence. Phosphorus, boron, and nitrogen were introduced by ion implantation into Si+-implanted thermal SiO2 films either before or after synthesis of Si nanocrystals performed at Si excess of about 10 at.% and annealing temperatures of 1000 and 1100 °C. After the implantation of the impurity ions the samples were finally annealed at 1000 °C. It is found that, independently of ion kind, the ion irradiation (the first stage of the doping process) completely quenches the photoluminescence related to Si nanocrystals (peak at around 750 nm) and modifies visible luminescence of oxygen-deficient centers in the oxide matrix. The doping with phosphorus increases significantly intensity of the 750 nm photoluminescence excited by a pulse 337 nm laser for the annealing temperature of 1000 °C, while introduction of boron and nitrogen atoms reduces this emission for all the regimes used. In general, the effective lifetimes (ranging from 4 to 40 s) of the 750 nm photoluminescence correlate with the photoluminescence intensity. Several factors such as radiation damage, influence of impurities on the nanocrystals formation, carrier-impurity interaction are discussed. The photoluminescence decay is dominated by the non-radiative processes due to formation or passivation of dangling bonds, whereas the intensity of photoluminescence (for excitation pulses much shorter than the photoluminescence decay) is mainly determined by the radiative lifetime. The influence of phosphorus doping on radiative recombination in Si quantum dots is analyzed theoretically.
More about this publication?
  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
  • Editorial Board
  • Information for Authors
  • Subscribe to this Title
  • Terms & Conditions
  • ingentaconnect is not responsible for the content or availability of external websites

Tools

Favourites

Share Content

Access Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content
Cookie Policy
X
Cookie Policy
ingentaconnect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more