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Resonant Raman and Micro-Raman Scattering from Si Matrix with Unburied -FeSi2 Nanolayers

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Abstract:

Samples, representing Si matrix with nanolayers of the semiconducting -FeSi2 silicide are studied by Raman scattering. The unpolarized Raman spectra of the samples are measured in two different configurations. It is found that the characteristic -FeSi2 Raman modes are seen in the spectra, taken at incident angle of about 45°, while only comparatively intensive broad feature is detected in a back-scattering geometry. The difference in the spectra is interpreted with the appearance of surface polariton modes of the optical phonons in the nanosized layers in near back-scattering geometry. The resonant Raman scattering is investigated at incident light angle of about 45° and the energies of the interband transitions in the investigated energy range are determined. It is known that the resonant Raman scattering appears to be even more precise method for the determination of the interband transitions energies than the modulation spectroscopy. Thus we claim that the energies determined here are firstly determined with such a precision.

Keywords: BETA-FESI2; RAMAN SCATTERING; RESONANT RAMAN SCATTERING; SURFACE POLARITONS

Document Type: Research Article

DOI: https://doi.org/10.1166/jnn.2008.A055

Publication date: 2008-02-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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