Nanostructure Assembly of Indium Sulphide Quantum Dots and Their Characterization

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Abstract:

Nanocrystals (∼5 nm) of the semiconducting wide band gap material -In2S3 obtained by chemical synthesis through a hydrothermal route were characterized for phase and compositional purity. These nanoparticles exhibited quantum confinement characteristics as revealed by a blue-shifted optical absorption. These quantum dots of -In2S3 were electrically driven from a monodisperse colloidal suspension on to conducting glass substrates by Electophoretic Deposition (EPD) technique and nanostructural thin films were obtained. The crystalline and morphological structures of these deposits were investigated by X-ray diffraction and nanoscopic techniques. We report here that certain interesting nanostructural morphologies were observed in the two-dimensional quantum dot assemblies of -In2S3. The effect of the controlling parameters on the cluster growth and deposit integrity was also systematically studied through a series of experiments and the results are reported here.

Keywords: BETA-INDIUM SULPHIDE; CLUSTER GROWTH; ELECTROPHORETIC DEPOSITION; QUANTUM DOTS; SELF-ASSEMBLY

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2008.A128

Publication date: February 1, 2008

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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